DMG3415UFY4
100,000
10,000
T A = 150°C
T A = 125°C
1,000
100
T A = 85°C
10
T A = 25°C
1
2
T A = -55°C
4 6 8 10 12 14 16 18 20
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Leakage Current vs. Drain-Source Voltage
1
D = 0. 7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.9
R θ JA (t) = r(t) * R θ JA
R θ JA = 171°C/W
0.01
D = 0.01
P(pk)
t 1
t 2
T J A = P * R θ JA (t)
D = 0.005
-T
Duty Cycle, D = t 1 2
/t
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01 0.1 1
10
100
1,000
t 1 , PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
Ordering Information (Note 7)
Part Number
DMG3415UFY4-7
Case
DFN2015H4-3
Packaging
3000/Tape & Reel
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
34P
YM
34P = Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Year
Code
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMG3415UFY4
Document number: DS31842 Rev. 4 - 2
4 of 6
www.diodes.com
December 2009
? Diodes Incorporated
相关PDF资料
DMG3420U-7 MOSFET N-CH 20V 5.47A SOT23
DMG4406LSS-13 MOSFET N CH 30V 10.3A SO-8
DMG4413LSS-13 MOSFET P-CH 30V 10.5A SOP8L
DMG4435SSS-13 MOSFET P-CH 30V 7.3A 8SOIC
DMG4466SSS-13 MOSFET N-CH 30V 10A SO8
DMG4466SSSL-13 MOSFET N-CH 30V 10A SO8
DMG4468LFG MOSFET N-CH 30V 7.62A 8DFN
DMG4468LK3-13 MOSFET N-CH 30V 9.7A TO252
相关代理商/技术参数
DMG3415UQ-7 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMG3420U 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG3420U-7 功能描述:MOSFET MOSFET,N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG3420UQ-7 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMG-400 制造商:Pro-Signal 功能描述:GOOSENECK MIC BARE ENDS 制造商:PRO SIGNAL 功能描述:GOOSENECK MIC, BARE ENDS 制造商:pro-power 功能描述:GOOSENECK MIC, BARE ENDS; Output Impedance:500ohm; Frequency Response Min:200Hz; Frequency Response Max:12kHz; Sensitivity:2.2mV/Pa/1kHz; Connector Type:3 Bare Wire Ends; Device Type:Gooseneck Microphone; External Diameter:28mm;
DMG4406LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMG4406LSS-13 功能描述:MOSFET N-Ch ENH 30V 11mOhm 10.3A 10V VGS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4407SSS-13 功能描述:MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube